It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

RV1C001ZPT2L

Images are for reference only
See Product Specifications

Mouser No:

755-RV1C001ZPT2L

Mfr. No:

RV1C001ZPT2L

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Small Signal MOSFET

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

RV1C001ZPT2L Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor RV1C001ZPT2L

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-0806-3
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	100 mA
Rds On - Drain-Source Resistance:	3.8 Ohms
Vgs - Gate-Source Voltage:	10 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	100 mW
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	137 ns
Forward Transconductance - Min:	120 mS
Product Type:	MOSFETs
Rise Time:	62 ns
Series:	RV1C001ZP
Factory Pack Quantity:	8000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	325 ns
Typical Turn-On Delay Time:	46 ns
Part # Aliases:	RV1C001ZP
Unit Weight:	12.325 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RV1C001ZPT2L Datasheet

Other

Specification Sheets

Datasheet - Japanese

SPICE Models

SpiceLink

Technical Resources

Test/Quality Data

Compliance Codes

CNHTS:: 8541210000
CAHTS:: 8541290000
USHTS:: 8541210095
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Ultra Compact MOSFETs & Bipolar Transistors

ROHM Semiconductor Ultra-Compact MOSFETs & Bipolar Transistors have the smallest transistor package on the market which is optimized for thin, compact portable devices. The VML0806 case type measures just 0.8mm×0.6mm, with a height of only 0.36mm. As portable devices, such as smartphones and digital cameras get smaller and more sophisticated, thinner, more compact components are required. Until now, problems related to internal element miniaturization, bonding stability, package process accuracy, and surface mount technology limit the smallest conventional transistors to the 1006 size (1.0mm×0.6mm, t=0.37mm). ROHM was able to overcome these challenges by utilizing a smaller element and high-precision package process technology, resulting in an unprecedentedly compact form factor.

Silicon Power MOSFETs

ROHM Semiconductor Silicon Power MOSFETs feature ultra-fast switching speeds and low on-resistance. These MOSFETs are available in a wide lineup of packages, including the miniature 0604 size to save space in various designs.