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SISF02DN-T1-GE3

Name: Vishay SISF02DN-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SISF02DN-T1-GE3
Price: 208.43 INR
Availability: OutOfStock

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Mouser No:

78-SISF02DN-T1-GE3

Mfr. No:

SISF02DN-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs PPAK1212 2NCH 25V 30.5A

Datasheet:

SISF02DN-T1-GE3 Datasheet

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Availability

Stock:: 0

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On Order:: 3,580

Expected 19-02-2026
Factory Lead Time:: 9

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹208.43	₹208.43
	₹123.98	₹1,239.80
	₹92.54	₹9,254.00
Full Ammo Pack (Order in multiples of 3000)
	₹78.34	₹2,35,020.00
	₹50.40	₹3,02,400.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	2.15 mOhms
Vgs - Gate-Source Voltage:	- 16 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	52 W
Channel Mode:	Enhancement
Tradename:	PowerPAK
Packaging:	Ammo Pack
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	10 ns
Forward Transconductance - Min:	105 S
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	SISF
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	24 ns
Unit Weight:	1 g

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Datasheet

SISF02DN-T1-GE3 Datasheet

Application Notes

PCN

Product Change Notification (PDF)

Technical Resources

REACH Certificate (PDF)

CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Integrated MOSFET Solutions

Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density and efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Integrated MOSFETs with Common Drain

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.