SSM3J338R,LF

Toshiba
757-SSM3J338RLF
SSM3J338R,LF

Mfr.:

Description:
MOSFETs Small-signal MOSFET Vdss= -12V, ID= -6A

Datasheet:
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Learn more about Toshiba SSM3J338R,LF

In Stock: 1,91,153

Stock:
1,91,153
Can Dispatch Immediately
On Order:
42,000
Expected 06-03-2026
Factory Lead Time:
18
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹44.02 ₹44.02
₹26.86 ₹268.60
₹17.43 ₹1,743.00
₹12.85 ₹6,425.00
₹11.50 ₹11,500.00
Full Reel (Order in multiples of 3000)
₹8.80 ₹26,400.00
₹8.53 ₹51,180.00
₹7.37 ₹66,330.00
₹7.10 ₹1,70,400.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SOT-23F
P-Channel
1 Channel
12 V
6 A
17.6 mOhms
- 8 V, 8 V
300 mV
+ 150 C
1 W
Enhancement
U-MOSVII
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Single
Product Type: MOSFETs
Series: SSM3J338
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 383 ns
Typical Turn-On Delay Time: 65 ns
Unit Weight: 11 mg
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

U-MOSVII MOSFETs

Toshiba U-MOSVII MOSFETs are single and dual P-channel MOSFETs with low voltage gate drive and low drain-source on-resistance. These Toshiba devices have a drain-source voltage range of -12V to -20V and a continuous drain current range from -1A to +14A. The U-MOSVII MOSFETs are offered in a wide range of package types for design flexibility.

Discrete Solid State Drive (SSD) Solutions

Toshiba Discrete Solid State Drive (SSD) Solutions feature a broad product lineup that meets current requirements with TVS, Shottkey Barrier Diodes (SBD), LDOs, Load Switch ICs, and the powerful eFuse IC. These SSDs can parse through data quicker than a traditional Hard Disk Drive (HDD). As SSD technology improves, it will require power circuitry that meets increasingly rigorous power demands and protection that keeps essential data safe from failures. Toshiba offers a comprehensive lineup of load switches and MOSFETs for controlling power inputs, protection ICs, and diodes designed to handle abnormal input power conditions and overvoltage surges during hotplug.

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