SSM6N67NU,LF

Toshiba
757-SSM6N67NULF
SSM6N67NU,LF

Mfr.:

Description:
MOSFETs LowON Res MOSFET ID=4A VDSS=30V

Datasheet:
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Learn more about Toshiba SSM6N67NU,LF

In Stock: 20,121

Stock:
20,121
Can Dispatch Immediately
On Order:
1,17,000
Expected 27-03-2026
Factory Lead Time:
16
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹54.80 ₹54.80
₹34.05 ₹340.50
₹21.83 ₹2,183.00
₹18.15 ₹9,075.00
₹15.09 ₹15,090.00
Full Reel (Order in multiples of 3000)
₹13.12 ₹39,360.00
₹11.59 ₹69,540.00
₹10.60 ₹95,400.00
₹10.42 ₹2,50,080.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
UDFN-6
N-Channel
2 Channel
30 V
4 A
39.1 mOhms
- 8 V, 12 V
400 mV
3.2 nC
- 55 C
+ 150 C
1 W
Enhancement
AEC-Q101
U-MOSVII-H
Reel
Cut Tape
MouseReel
Brand: Toshiba
Configuration: Dual
Forward Transconductance - Min: 6 S
Product Type: MOSFETs
Series: SSM6N67NU
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 17 ns
Typical Turn-On Delay Time: 26 ns
Unit Weight: 8.500 mg
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Attributes selected: 0 

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low RON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.

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