STD7NM80

STMicroelectronics
511-STD7NM80
STD7NM80

Mfr.:

Description:
MOSFETs N-Ch, 800V-0.95ohms Mdmesh 6.5A

ECAD Model:
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In Stock: 1,850

Stock:
1,850 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
₹398.89 ₹398.89
₹265.93 ₹2,659.30
₹190.46 ₹19,046.00
₹176.09 ₹88,045.00
₹156.32 ₹1,56,320.00
Full Reel (Order in multiples of 2500)
₹140.15 ₹3,50,375.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
800 V
6.5 A
1.05 Ohms
- 30 V, 30 V
4 V
18 nC
- 55 C
+ 150 C
90 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Configuration: Single
Fall Time: 10 ns
Forward Transconductance - Min: 4 S
Product Type: MOSFETs
Rise Time: 8 ns
Series: STD7NM80
Factory Pack Quantity: 2500
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 330 mg
Products found:
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Attributes selected: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
85412101
ECCN:
EAR99

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best RDS(on)*Qg in the industry.