080 42650011

Part of the TTI Family of Specialists Contact Mouser (Bangalore) 080 42650011 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

STGW25M120DF3

Name: STMicroelectronics STGW25M120DF3
Brand: STMicroelectronics
SKU: 511-STGW25M120DF3
Price: 541.74 INR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

511-STGW25M120DF3

Mfr. No:

STGW25M120DF3

Mfr.:

STMicroelectronics

Description:

IGBTs Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

Complete Your Design

Datasheet:

STGW25M120DF3 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about STMicroelectronics STGW25M120DF3

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 597

Expected 08-06-2026
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹541.74	₹541.74
	₹251.55	₹2,515.50
	₹221.01	₹22,101.00
	₹213.82	₹1,28,292.00
5,400	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.85 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	50 A
Pd - Power Dissipation:	326 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	M
Packaging:	Tube
Brand:	STMicroelectronics
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	600
Subcategory:	IGBTs
Unit Weight:	38 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

STGW25M120DF3 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive V_CE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.