TK190A65Z,S4X

Toshiba
757-TK190A65ZS4X
TK190A65Z,S4X

Mfr.:

Description:
MOSFETs MOSFET 650V 190mOhms DTMOS-VI

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Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
15 A
190 mOhms
30 V
4 V
25 nC
- 55 C
+ 150 C
40 W
Enhancement
Tube
Brand: Toshiba
Configuration: Single
Fall Time: 4 ns
Product Type: MOSFETs
Rise Time: 19 ns
Series: DTMOS VI
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 66 ns
Typical Turn-On Delay Time: 38 ns
Unit Weight: 2 g
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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.

In Stock: 96

Stock:
96 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹511.14 ₹511.14
₹334.39 ₹3,343.90
₹249.36 ₹24,936.00
₹209.23 ₹1,04,615.00
₹193.95 ₹1,93,950.00
₹181.53 ₹4,53,825.00