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TK210V65Z,LQ

Name: Toshiba TK210V65Z,LQ
Brand: Toshiba
SKU: 757-TK210V65ZLQ
Price: 157.64 INR
Availability: OutOfStock

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Mouser No:

757-TK210V65ZLQ

Mfr. No:

TK210V65Z,LQ

Mfr.:

Toshiba

Description:

MOSFETs MOSFET 650V 210mOhms DTMOS-VI

Datasheet:

TK210V65Z,LQ Datasheet (PDF)

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Learn more about Toshiba TK210V65Z,LQ

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	15 A
Rds On - Drain-Source Resistance:	210 mOhms
Vgs - Gate-Source Voltage:	30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Packaging:	Reel
Brand:	Toshiba
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	14 ns
Series:	DTMOS VI
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	34 ns
Unit Weight:	161.193 mg

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Datasheet

TK210V65Z,LQ Datasheet (PDF)

Application Notes

Models

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Test/Quality Data

Reliability Data

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

650V DTMOS-VI Superjunction MOSFETs

Toshiba 650V DTMOS-VI Superjunction MOSFETs are designed to operate in switching power supplies. These N-channel MOSFETs feature high-speed switching properties with lower capacitance. The Toshiba 650V DTMOS-VI Superjunction MOSFETs silicon MOSFETs offer a typical 0.092Ω to 0.175Ω low drain-source on-resistance. These devices feature a drain-source voltage of 10V.