UF3SC120040B7S

onsemi
431-UF3SC120040B7S
UF3SC120040B7S

Mfr.:

Description:
SiC MOSFETs 1200V/40MOSICFETG3TO263-7

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Product Attribute Attribute Value Select Attribute
onsemi
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
47 A
35 mOhms
- 25 V, + 25 V
6 V
43 nC
- 55 C
+ 175 C
214 W
Enhancement
SiC FET
Brand: onsemi
Configuration: Single
Fall Time: 7 ns, 8 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Product: SiC FETs
Product Type: SiC MOSFETS
Rise Time: 12 ns, 13 ns
Series: UF3SC
Factory Pack Quantity: 800
Subcategory: Transistors
Transistor Polarity: N-Channel
Type: SiC FET
Typical Turn-Off Delay Time: 47 ns
Typical Turn-On Delay Time: 37 ns
Unit Weight: 4.675 g
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Compliance Codes
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
China
Country of Diffusion:
United States
The country is subject to change at the time of shipment.

UF3SC High-Performance SiC FETs in D2-PAK

onsemi UF3SC High-Performance SiC FETs in D2-PAK-7L (7-lead Kelvin package) are based on a unique 'cascode' circuit configuration and feature excellent reverse recovery. This circuit configuration includes a normally-on SiC JFET to be co-packaged with Si MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These high-performance SiC FETs operate at 175°C maximum temperature, 43nC low gate charge, and 5V typical threshold voltage. Typical applications include telecom and server power, motor drives, induction heating, and industrial power supplies.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low RDS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.

In Stock: 127

Stock:
127 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹3,378.29 ₹3,378.29
₹2,532.77 ₹25,327.70
₹2,388.50 ₹2,38,850.00
₹2,262.39 ₹11,31,195.00
Full Reel (Order in multiples of 800)
₹2,262.39 ₹18,09,912.00

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