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VS-4C30ET07S2L-M3

Name: Vishay VS-4C30ET07S2L-M3
Brand: Vishay Semiconductors
SKU: 78-VS-4C30ET07S2L-M3
Price: 700.71 INR
Availability: InStock

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Mouser No:

78-VS-4C30ET07S2L-M3

Mfr. No:

VS-4C30ET07S2L-M3

Mfr.:

Vishay Semiconductors

Description:

SiC Schottky Diodes SiCG4D2PAK2L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

VS-4C30ET07S2L-M3 Datasheet (PDF)

ECAD Model:

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Learn more about Vishay Semiconductors VS-4C30ET07S2L-M3

In Stock: 775

Stock:: 775 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹700.71	₹700.71
	₹459.38	₹4,593.80
	₹338.24	₹33,824.00
	₹300.97	₹1,50,485.00
Full Reel (Order in multiples of 800)
	₹269.29	₹2,15,432.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263AB-2
Configuration:	SIngle
If - Forward Current:	30 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.33 V
Ifsm - Forward Surge Current:	180 A
Ir - Reverse Current:	125 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	VS-4C30ET07S2L-M3
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay Semiconductors
Pd - Power Dissipation:	167 W
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	800
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	650 V

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Datasheet

VS-4C30ET07S2L-M3 Datasheet (PDF)

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Compliance Codes

CAHTS:: 8541100090
USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Power Silicon Carbide SCHOTTKY Diodes

Vishay Semiconductors Power Silicon Carbide (SiC) Schottky Diodes are advanced, high‑performance rectifiers designed to deliver exceptional efficiency, ruggedness, and reliability in demanding power‑electronics applications. Built on wide-band-gap SiC technology, these Vishay diodes offer virtually zero reverse‑recovery charge, extremely fast switching capability, and temperature‑invariant performance, making the devices ideal for next‑generation high‑frequency power conversion systems.