VSLY5850

Vishay Semiconductors
782-VSLY5850
VSLY5850

Mfr.:

Description:
Infrared Emitters 850nm,T-1.75 600mW/sr,+/-3deg.

Datasheet:
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In Stock: 9,366

Stock:
9,366 Can Dispatch Immediately
Factory Lead Time:
4 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹98.82 ₹98.82
₹75.82 ₹758.20
₹65.49 ₹6,549.00
₹59.65 ₹29,825.00
₹56.33 ₹56,330.00
₹54.53 ₹1,09,060.00
₹48.06 ₹1,92,240.00
₹47.97 ₹5,75,640.00

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Infrared Emitters
RoHS:  
Through Hole
850 nm
600 mW/sr
3 deg
100 mA
1.65 V
190 mW
- 40 C
+ 85 C
Bulk
Brand: Vishay Semiconductors
Fall Time: 10 ns
Illumination Colour: Infrared
Lens Shape: Dome
Product Type: IR Emitters (IR LEDs)
Rise Time: 10 ns
Factory Pack Quantity: 4000
Subcategory: Infrared Data Communications
Tradename: SurfLight
Unit Weight: 449.665 mg
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Attributes selected: 0

Datasheet

Application Notes

Models

PCN

CNHTS:
8541410090
CAHTS:
8541410000
USHTS:
8541410000
JPHTS:
854141000
TARIC:
8541410000
MXHTS:
8541410100
BRHTS:
85414011
ECCN:
EAR99

IR Emitters & Silicon PIN Photodiode

Vishay Semiconductors IR Emitters and Silicon PIN Photodiodes feature an 830nm to 950nm wavelength range with high radiant sensitivity from 1mW/sr to 1800mW/sr. These emitters provide double heterojunction infrared emitters with the lowest forward voltages and highly efficient homojunction emitters. The photodiodes offer the broadest selection of high-speed, low-dark current PIN photodiodes that are specifically designed to achieve excellent sensitivity together with high reliability.

SurfLight™ IR Emitters

Vishay Semiconductors SurfLight™ Infrared (IR) Emitters feature 850nm or 940nm peak wavelength, GaAlAs surface emitter chip technology, high radiant power, high optical power, and high speed. SurfLight IR emitters have gullwing or reverse gullwing terminal configurations and are suitable for high pulse current operation. The 940nm IR emitters have a narrower half-degree angle of intensity and better response times for applications. These Vishay compared to the previous generation of IR emitters.

VSLY850 High Speed IR Emitting Diodes

Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes are infrared, 850nm emitting diodes based on GaAlAs surface emitter chip technology. Vishay Semiconductors VSLY850 High Speed IR Emitting Diodes have extreme high radiant intensity, high optical power, high speed, and are molded in clear, untinted plastic packages. The VSLY3850 comes in a T-1 plastic package, and the VSLY5850 also has a parabolic lens.

High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

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