It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVMFS5832NLWFT1G-UM

Name: onsemi NVMFS5832NLWFT1G-UM
Brand: onsemi
SKU: 863-FS5832NLWFT1G-UM
Price: 176.09 INR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

863-FS5832NLWFT1G-UM

Mfr. No:

NVMFS5832NLWFT1G-UM

Mfr.:

onsemi

Description:

MOSFETs Power MOSFET 40V, 120A, 4.2 mOhm, Single N-Channel, SO8-FL, Logic Level.

Lifecycle:

New Product:

New from this manufacturer.

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVMFS5832NLWFT1G-UM

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 1,500

Expected 10-04-2026
Factory Lead Time:: 40

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹176.09	₹176.09
	₹112.30	₹1,123.00
	₹77.62	₹7,762.00
	₹65.76	₹32,880.00
	₹54.98	₹54,980.00
Full Reel (Order in multiples of 1500)
	₹54.98	₹82,470.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-5
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	4.2 mOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	51 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	127 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Fall Time:	8 ns
Forward Transconductance - Min:	21 S
Product Type:	MOSFETs
Rise Time:	24 ns
Series:	NVMFS5832NL
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	27 ns
Typical Turn-On Delay Time:	13 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

TARIC:: 8541290000
ECCN:: EAR99

NVMx & NVTx Power MOSFETs

onsemi NVMx and NVTx Power MOSFETs are AEC−Q101 Qualified and offer compact and efficient solutions for automotive applications. NVMx and NVTx Power MOSFETs offer Low R_DS(on) to minimize conduction losses and low Q_G and Capacitance to minimize driver losses. These onsemi single N-Channel MOSFETs are housed in a compact, SO-8FL, and WDFN8 packages and are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.

N-Channel 40V & 60V Automotive Power MOSFETs

onsemi NVMFSCx Automotive Power 40V and 60V MOSFETs are available in 5mm x 6mm dual-sided cooled packages ideal for compact and efficient designs. The single N-Channel devices feature 1.5mΩ and 0.9mΩ R_DS(on) drain-source on-resistance to minimize conductive losses. The MOSFETs includes a wettable flank option available for enhanced optical inspection. The devices are also AEC-Q101-qualified and PPAP-capable, making them suitable for automotive applications.

NVMFS5832NL Single N-Channel Power MOSFET

onsemi NVMFS5832NL Single N-Channel Power MOSFET is a high-performance MOSFET designed for low-voltage applications requiring efficient power switching. Built on advanced trench technology, the onsemi NVMFS5832NL offers an exceptionally low R_DS(on) of 4.2mΩ at V_GS = 10V, enabling reduced conduction losses and improved thermal performance. With a maximum drain-source voltage of 40V and a continuous drain current rating of up to 120A, this MOSFET is ideal for demanding environments such as DC-DC converters, synchronous rectification, and motor control. The compact 5mm x 6mm Power DFN package ensures high power density and excellent thermal dissipation, while the device’s low gate charge supports fast switching for enhanced efficiency in high-frequency designs.