600V Power Schottky Silicon Carbide Diode

STMicroelectronics' 600V Power Schottky Silicon Carbide Diodes are ultra high performance power Schottky diodes. They are manufactured using a silicon carbide substrate. The wide band gap material of these allows the design of a Schottky diode structured with a 600V rating. Due to the Schottky construction of these diodes no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These Power Schottky Silicon Carbide Diodes will boost the performance of PFC operations in hard switching conditions.

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Qty. RoHS ECAD Model Mounting Style
Package/Case
Configuration
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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STMicroelectronics SiC Schottky Diodes 600 V Power Schottky Diode
Datasheet
680In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2,500

SMD/SMT DPAK Single 4 A 600 V 1.9 V 14 A 50 uA - 40 C + 175 C STPSC Reel, Cut Tape, MouseReel
STMicroelectronics SiC Schottky Diodes 600 V Power Schottky Diode
Datasheet
Non-Stocked
Min.: 1,000
Mult.: 1,000

Through Hole TO-220AC-2 Single 4 A 600 V 1.9 V 14 A 50 uA - 40 C + 175 C STPSC Tube
STMicroelectronics SiC Schottky Diodes 600V Power Schottky 8A 10 nC No Reverse
Datasheet
Non-Stocked
Min.: 1,000
Mult.: 1,000
Reel: 1,000

Through Hole D2PAK Single 8 A 600 V 1.7 V 30 A 100 uA - 40 C + 175 C STPSC Reel