EMD4E001G Spin-Transfer Torque MRAM

Everspin Technologies EMD4E001G Spin-Transfer Torque Magnetic RAM (STT-MRAM) features 1Gb non-volatile ST-DDR4 MRAM with a 64Mb x 16 organization. These devices offer more effective management of I/O streams, allowing storage OEMs to significantly improve the quality of service of their products. The double data rate (DDR) architecture achieves high-speed operation and is an 8n prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. Other features include multipurpose register READ and WRITE capability, per-device addressability (PDA), and on-device termination. Everspin Technologies EMD4E001G is compatible with Xilinx FPGA controllers and offers a persistent data buffer in storage and fabric/software accelerators, computational storage, and other applications.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Package/Case Interface Type Memory Size Organisation Access Time Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Packaging
Everspin Technologies MRAM 1Gb Non-Volatile ST-DDR4 Spin-transfer Torque MRAM Non-Stocked Lead-Time 29 Weeks
Min.: 2,000
Mult.: 2,000
Reel: 2,000

FBGA-96 Parallel 1 Gbit 64 M x 16 18 ns 1.14 V 1.26 V 0 C + 85 C Reel
Everspin Technologies MRAM 1Gb Non-Volatile ST-DDR4 Spin-transfer Torque MRAM Non-Stocked Lead-Time 29 Weeks
Min.: 380
Mult.: 190

FBGA-96 Parallel 1 Gbit 64 M x 16 18 ns 1.14 V 1.26 V 0 C + 85 C Tray