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SISS94DN-T1-GE3

Name: Vishay SISS94DN-T1-GE3
Brand: Vishay Semiconductors
SKU: 78-SISS94DN-T1-GE3
Price: 128.47 INR
Availability: InStock

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Mouser No:

78-SISS94DN-T1-GE3

Mfr. No:

SISS94DN-T1-GE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs N-CHANNEL 200-V(D-S) PowerPAK 1212-8S

Datasheet:

SISS94DN-T1-GE3 Datasheet

ECAD Model:

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In Stock: 26,727

Stock:: 26,727 Can Dispatch Immediately

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Factory Lead Time:: 31 Weeks Estimated factory production time for quantities greater than shown.

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹128.47	₹128.47
	₹81.04	₹810.40
	₹53.81	₹5,381.00
	₹42.13	₹21,065.00
	₹38.36	₹38,360.00
Full Reel (Order in multiples of 3000)
	₹34.32	₹1,02,960.00
	₹31.71	₹1,90,260.00
	₹31.53	₹2,83,770.00
	₹30.73	₹7,37,520.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK-1212-8SH-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	19.5 A
Rds On - Drain-Source Resistance:	75 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	65.8 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay Semiconductors
Configuration:	Single
Fall Time:	7 ns
Forward Transconductance - Min:	12 S
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	SISS
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	12 ns
Unit Weight:	488.500 mg

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Filter Document:

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

SISS94DN ThunderFET® MOSFET

Vishay SISS94DN ThunderFET^® MOSFET is an N-channel 200V_DS device that uses TrenchFET^® with ThunderFET technology. This ThunderFET MOSFET optimizes the balance of R_DS(on), Q_g, Q_sw, and Q_oss. The device is 100% R_g and Unclamped Inductive Switching (UIS) tested. This SISS94DN MOSFET is available in a PowerPAK 1212-8S package and is Lead (Pb)-free and halogen-free (SiSS94DN-T1-GE3). The MOSFET operates from -55°C to +150°C temperature range and comes in a single configuration. Typical applications include primary side switching, synchronous rectification, DC/DC topologies, lighting, load switches, and motor drive control.

ThunderFET® Power MOSFETs

Vishay / Siliconix ThunderFET® Power MOSFETs provide low values of on-resistance for 100V MOSFETs with 4.5V ratings. The lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. Vishay / Siliconix ThunderFET Power MOSFETs are optimized for primary-side switching and secondary-side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The 4.5V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.