STD80N240K6

STMicroelectronics
511-STD80N240K6
STD80N240K6

Mfr.:

Description:
MOSFETs N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package
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In Stock: 364

Stock:
364
Can Dispatch Immediately
On Order:
2,500
Expected 17-08-2026
Factory Lead Time:
13
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹464.47 ₹464.47
₹340.49 ₹3,404.90
₹274.91 ₹27,491.00
₹244.36 ₹1,22,180.00
₹209.33 ₹2,09,330.00
Full Reel (Order in multiples of 2500)
₹209.33 ₹5,23,325.00
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
N-Channel
1 Channel
800 V
16 A
220 Ohms
- 30 V, 30 V
4 V
25.9 nC
- 55 C
+ 150 C
105 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Product Type: MOSFETs
Factory Pack Quantity: 2500
Subcategory: Transistors
Unit Weight: 330 mg
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STD80N240K6 800V 16A MDmesh K6 Power MOSFET

STMicroelectronics STD80N240K6 800V 16A MDmesh™ K6 Power MOSFET offers an excellent RDS(on) x area and a low total gate charge (Qg), enabling high switching speeds and low losses. An integrated ESD protection diode increases the overall ruggedness of the STD80N240K6 MOSFET up to Human Body Model (HBM) Class 2. The MDmesh K6 MOSFETs have a reduced threshold voltage compared with the previous MDmesh K5 generation, enabling a lower driving voltage and thus reducing power losses and gaining efficiency mainly for zero-watt standby applications. The STD80N240K6 is optimized for lighting applications based on flyback topology, such as LED drivers and HID lamps. The device is also ideal for adapters and power supplies for flat-panel displays. 

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.

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