SIS890ADN-T1-GE3

Vishay / Siliconix
78-SIS890ADN-T1-GE3
SIS890ADN-T1-GE3

Mfr.:

Description:
MOSFETs PWRPK 100V 24.7A N-CH MOSFET

Datasheet:
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In Stock: 58,867

Stock:
58,867 Can Dispatch Immediately
Minimum: 1   Multiples: 1
Unit Price:
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Ext. Price:
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Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹118.59 ₹118.59
₹75.02 ₹750.20
₹49.50 ₹4,950.00
₹39.26 ₹19,630.00
₹35.76 ₹35,760.00
Full Reel (Order in multiples of 3000)
₹31.17 ₹93,510.00
₹28.84 ₹1,73,040.00
₹27.13 ₹2,44,170.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
PowerPAK-1212-8
N-Channel
1 Channel
100 V
24.7 A
25.5 mOhms
- 20 V, 20 V
2.5 V
19.2 nC
- 55 C
+ 150 C
39 W
Enhancement
TrenchFET
Reel
Cut Tape
MouseReel
Brand: Vishay / Siliconix
Fall Time: 4 ns
Forward Transconductance - Min: 45 S
Product Type: MOSFETs
Rise Time: 6 ns
Series: SIS
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: TrenchFET Power MOSFET
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 9 ns
Unit Weight: 1 g
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CNHTS:
8541290000
TARIC:
8541290000
USHTS:
8541290065
ECCN:
EAR99

TrenchFET® Gen IV MOSFETs

Vishay / Siliconix TrenchFET® Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high-power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switches.

SiS890ADN N-Channel 100V MOSFET

Vishay / Siliconix SiS890ADN N-Channel 100V MOSFET offers 100VDC drain-source voltage, 40A pulsed drain current, and a single configuration. It features low RDS x Qg figure-of-merit (FOM) along with TrenchFET® GEn IV power. This MOSFET is 100% Rg and UIS tested. Vishay SiS890ADN N-Channel 100V MOSFET is ideally suited for synchronous rectification, primary side switches, DC/DC converters, and circuit protection.

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