CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

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Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
Datasheet
188In Stock
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 1 Channel 1.2 kV 80 A 23 mOhms - 10 V, + 25 V 5.1 V 73 nC - 40 C + 175 C 356 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
Datasheet
215In Stock
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 171 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
Datasheet
182In Stock
Min.: 1
Mult.: 1

Through Hole PG-TO-247-4 1 Channel 1.2 kV 44 A 45 mOhms - 10 V, + 25 V 5.1 V 37 nC - 40 C + 175 C 250 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datasheet
565In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
Datasheet
436In Stock
3,000Expected 17-09-2026
Min.: 1
Mult.: 1
: 750

CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
1,776In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 82 A 67 mOhms - 10 V, + 25 V 5.1 V 63.4 nC - 55 C + 175 C 405 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
1,381In Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 64 A 89 mOhms - 10 V, + 25 C 5.1 V 48.7 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
951In Stock
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 56 A 104 mOhms - 10 V, + 25 V 5.1 V 42.4 nC - 55 C + 175 C 288 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
330In Stock
750Expected 12-11-2026
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 43 A 138 mOhms - 10 V, + 25 V 5.1 V 32.8 nC - 55 C + 175 C 234 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datasheet
692In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datasheet
650In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
Datasheet
189In Stock
750Expected 19-11-2026
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datasheet
105In Stock
240Expected 12-11-2026
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 16 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 480 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datasheet
339In Stock
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 80 A 29 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2
Datasheet
352In Stock
Min.: 1
Mult.: 1

Through Hole PG-TO247-4-U02 1 Channel 1.2 kV 48 A 51 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2
Datasheet
371In Stock
480On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2
Datasheet
493In Stock
240On Order
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 97 A 17 mOhms - 10 V, + 25 V 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2
Datasheet
1,377In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 34 mohm G2
Datasheet
699In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2
Datasheet
677In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200V, 78 mohm G2
Datasheet
460In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1 Channel 1.2 kV 28 A 78 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datasheet
857In Stock
2,000On Order
MouseReel Available
Min.: 1
Mult.: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC MOSFET 1200 V G2 in TO-263-7 package
Datasheet
3,134In Stock
Min.: 1
Mult.: 1
: 1,000

SMD/SMT TO-263-7 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling
Datasheet
6In Stock
3,750On Order
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22 1.2 kV 257 A 7.5 mOhms 4.2 V + 175 C - 55 C 1.172 kW CoolSiC
Infineon Technologies SiC MOSFETs CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
Datasheet
35In Stock
2,250Expected 03-09-2026
Min.: 1
Mult.: 1
: 750

SMD/SMT PG-HDSOP-22-U03 1 Channel 1.2 kV 31 A 205 mOhms - 10 V, + 25 V 5.1 V 23.2 nC - 55 C + 175 C 176 W Enhancement CoolSiC