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NTTFS6H850NLTAG

Name: onsemi NTTFS6H850NLTAG
Brand: onsemi
SKU: 863-NTTFS6H850NLTAG
Price: 162.13 INR
Availability: InStock

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See Product Specifications

Mouser No:

863-NTTFS6H850NLTAG

Mfr. No:

NTTFS6H850NLTAG

Mfr.:

onsemi

Description:

MOSFETs 80V 108A 8.66m?Ohm Single N-Channel

Datasheet:

NTTFS6H850NLTAG Datasheet

ECAD Model:

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More Information

Learn more about onsemi NTTFS6H850NLTAG

In Stock: 357

Stock:: 357

Can Dispatch Immediately

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On Order:: 1,500

Expected 06-12-2027
Factory Lead Time:: 52

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1500)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹162.13	₹162.13
	₹102.50	₹1,025.00
	₹68.11	₹6,811.00
	₹53.39	₹26,695.00
	₹42.68	₹42,680.00
Full Reel (Order in multiples of 1500)
	₹42.68	₹64,020.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WDFN-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	80 V
Id - Continuous Drain Current:	64 A
Rds On - Drain-Source Resistance:	8.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	26 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	73 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Fall Time:	5 ns
Forward Transconductance - Min:	64.1 S
Product Type:	MOSFETs
Rise Time:	21 ns
Series:	NTTFS6H850NL
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	9 ns
Unit Weight:	29.570 mg

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Datasheet

NTTFS6H850NLTAG Datasheet

PCN

Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

NTTFS6H850NL Single N-Channel Power MOSFET

onsemi NTTFS6H850NL Single N-Channel Power MOSFET offers a low drain-to-source ON-Resistance and low capacitance to minimize driver losses. The NTTFS6H850NL MOSFET features a small 3.3mm x 3.3mm footprint for compact and efficient designs and is Pb-free and RoHS compliant.

Trench8 MOSFETs

onsemi Trench8 MOSFETs feature low maximum ON-resistance (R_DS(ON), ultra-low gate charge (Q_g), and low (Q_g) x R_DS(ON), a key figure of merit (FOM) for MOSFETs used in power conversion applications. Featuring optimized switching performance based on T6 technology, the Trench8 MOSFETs offer a 35% to 40% reduction in Q_g and Q_oss from the Trench6 series. The onsemi Trench8 MOSFETs are available in a wide range of package types for design flexibility. AEC-Q101 Qualified and PPAP capable options are available for automotive applications. Many of these devices are offered in flank-wettable packages enabling automated optical inspection (AOI).