SCT4018KW7TL

ROHM Semiconductor
755-SCT4018KW7TL
SCT4018KW7TL

Mfr.:

Description:
SiC MOSFETs TO263 1.2KV 75A N-CH SIC

ECAD Model:
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In Stock: 1,145

Stock:
1,145 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 1145 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 1000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
₹2,941.69 ₹2,941.69
₹2,200.91 ₹22,009.10
₹2,136.62 ₹2,13,662.00
₹2,047.16 ₹10,23,580.00
Full Reel (Order in multiples of 1000)
₹2,047.16 ₹20,47,160.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
ROHM Semiconductor
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TO-263-7
N-Channel
1 Channel
1.2 kV
75 A
23.4 mOhms
- 4 V, + 21 V
4.8 V
170 nC
+ 175 C
267 W
Enhancement
Brand: ROHM Semiconductor
Configuration: Single
Fall Time: 11 ns
Forward Transconductance - Min: 22 S
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: MOSFET's
Product Type: SiC MOSFETS
Rise Time: 21 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 13 ns
Part # Aliases: SCT4018KW7
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Compliance Codes
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99
Origin Classifications
Country of Origin:
Thailand
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

SCT4018KW7 N-Ch SiC power MOSFET

ROHM Semiconductor SCT4018KW7 N-Ch SiC power MOSFET offers low on-resistance and a fast switching speed. The SCT4018KW7 is simple to drive and easy to parallel. The device also features lead-free lead plating and is RoHS compliant. ROHM Semiconductor SCT4018KW7 N-Ch SiC power MOSFET is suitable for solar inverters, induction heating, switch mode power supplies, DC/DC converters, and motor drives.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.