F3L200R07W2S5FP EasyPACK™ IGBT Modules

Infineon Technologies F3L200R07W2S5FP EasyPACK™ IGBT Modules feature up to 650V increased blocking voltage capability and employ CoolSiC™ Schottky diode (gen5). These devices are based on TRENCHSTOP™ IGBT5  and PressFIT contact technology. The F3L200R07W2S5FP IGBT modules provide strongly reduced switching losses and an Al2O3 substrate with low thermal resistance. These modules come with a compact design comprising rugged mounting due to integrated mounting clamps and pre-applied thermal interface material. The F3L200R07W2S5FP IGBT modules are ideal for motor drives, solar applications, 3-level applications, and UPS systems.  

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Minimum Operating Temperature Maximum Operating Temperature Packaging
Infineon Technologies IGBT Modules 650 V, 200 A 3-level IGBT module Lead-Time 10 Weeks
Min.: 1
Mult.: 1

SiC IGBT Modules 3-Phase Inverter 650 V 1.17 V 200 A 100 nA - 40 C + 150 C Tray
Infineon Technologies IGBT Modules 650 V, 200 A 3-level IGBT module Non-Stocked Lead-Time 10 Weeks
Min.: 18
Mult.: 18

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Infineon Technologies F3L200R07W2S5FPB56BPSA1
Infineon Technologies IGBT Modules 650 V, 200 A 3-level IGBT module Non-Stocked Lead-Time 10 Weeks
Min.: 18
Mult.: 18

Tray