DMT31M8LFVWQ 30V N-Ch Enhancement Mode MOSFETs

Diodes Incorporated DMT31M8LFVWQ 30V N-Channel Enhancement Mode MOSFETs provide low on-resistance in a thermally efficient small form factor package. The devices offer superior switching performance and are ideal for high-efficiency power management applications. The Diodes Inc. DMT31M8LFVWQ MOSFETs are available in a PowerDI®3333-8 package with a wettable flank for improved optical inspection.

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 Mfr.
Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Diodes Incorporated MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8/SWP T&R 3K
Datasheet
3,000In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 3,000

Si SMD/SMT PowerDI3333-8 N-Channel 1 Channel 30 V 24 A 2.6 mOhms - 20 V, 20 V 2.5 V 43.1 nC - 55 C + 150 C 3.5 W Enhancement Reel, Cut Tape, MouseReel
Diodes Incorporated MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8/SWP T&R 2K
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 2,000
Mult.: 2,000
Reel: 2,000

Si SMD/SMT PowerDI3333-8 N-Channel 1 Channel 30 V 138 A 2.6 mOhms - 20 V, 20 V 2.5 V 43.1 nC - 55 C + 150 C 3.5 W Enhancement Reel