MB85RS4MLY 4M (512K x 8) Bit SPI FRAM

RAMXEED MB85RS4MLY 4M (512K x 8) Bit SPI FRAM (Ferroelectric Random Access Memory) chip features a configuration of 524,288 words x 8-bits. The devices utilize the ferroelectric and silicon gate CMOS process technologies to form nonvolatile memory cells. The MB85RS4MLY employs a Serial Peripheral Interface (SPI) and is ideal for high-temperature environment applications.

Results: 4
Select Image Part # Mfr. Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Memory Size Interface Type Maximum Clock Frequency Organisation Package/Case Supply Voltage - Min Supply Voltage - Max Minimum Operating Temperature Maximum Operating Temperature Qualification Packaging

RAMXEED F-RAM 4Mbit FeRAM, SPI, 1.7-1.95V - SOP8 (208mil) T&R (125C) Non-Stocked Lead-Time 22 Weeks
Min.: 500
Mult.: 500
Reel: 500

4 Mbit SPI 50 MHz 512 k x 8 SOP-8 1.7 V 1.95 V - 40 C + 125 C Reel

RAMXEED F-RAM 4Mbit FeRAM, SPI, 1.7 1.95V - DFN8 T&R (125?) Non-Stocked Lead-Time 20 Weeks
Min.: 1,500
Mult.: 1,500
Reel: 1,500

4 Mbit SPI 50 MHz 512 k x 8 DFN-8 1.7 V 1.95 V - 40 C + 125 C Reel

RAMXEED F-RAM 4Mbit FeRAM, SPI, 1.7-1.95V - DFN8 T&R (AECQ100 125C) Non-Stocked Lead-Time 22 Weeks
Min.: 1,500
Mult.: 1,500
Reel: 1,500

4 Mbit SPI 50 MHz 512 k x 8 DFN-8 1.7 V 1.95 V - 40 C + 125 C AEC-Q100 Reel
RAMXEED F-RAM 4Mbit FeRAM, SPI, 1.7-1.95V - SOP8 (208mil) tube (125C) Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

4 Mbit SPI 50 MHz 512 k x 8 SOP-8 1.7 V 1.95 V - 40 C + 125 C Tube