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NGWx Trench Field-Stop IGBTs
Nexperia NGWx Trench Field-Stop Insulated-Gate Bipolar Transistors (IGBTs) feature third-generation technology and combine carrier-stored trench-gate and field-stop (FS) structures. Rated up to 175°C, the IGBTs offer optimized IGBT turn-off losses with a 5μs short circuit withstand time. These hard-switching 600V and 30A IGBTs are optimized for high-voltage, low-frequency industrial power inverter, and servo motor drive applications.
