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SCT4013DRC15

Name: ROHM Semiconductor SCT4013DRC15
Brand: ROHM Semiconductor
SKU: 755-SCT4013DRC15
Price: 3267.82 INR
Availability: OutOfStock

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Mouser No:

755-SCT4013DRC15

Mfr. No:

SCT4013DRC15

Mfr.:

ROHM Semiconductor

Description:

SiC MOSFETs TO247 750V 105A N-CH SIC

Datasheet:

SCT4013DRC15 Datasheet

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Availability

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On Order:: 450

Expected 11-11-2026
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹3,267.82	₹3,267.82
	₹2,415.23	₹24,152.30

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	750 V
Id - Continuous Drain Current:	105 A
Rds On - Drain-Source Resistance:	16.9 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	170 nC
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	17 ns
Forward Transconductance - Min:	32 S
Packaging:	Tube
Product:	MOSFET's
Product Type:	SiC MOSFETS
Rise Time:	32 ns
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	82 ns
Typical Turn-On Delay Time:	17 ns
Part # Aliases:	SCT4013DR

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Datasheet

SCT4013DRC15 Datasheet

Specification Sheets

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

4th Generation N-Channel SiC Power MOSFETs

ROHM Semiconductor 4th Generation N-Channel Silicon-Carbide (SiC) Power MOSFETs provide low on-resistances with improvements in the short-circuit withstand time. The 4th Generation SiC MOSFETs are easy to parallel and simple to drive. The MOSFETs feature fast switching speeds/reverse recovery, low switching losses, and a +175°C maximum operating temperature. The ROHM 4th Generation N-Channel SSiC Power MOSFETs support a 15V gate-source voltage that contributes to device power savings.

SCT4013DR N-Channel SiC Power MOSFET

ROHM Semiconductor SCT4013DR N-Channel Silicon Carbide (SiC) Power MOSFET is a high-performance device designed for demanding power electronics applications. Featuring a drain-source voltage rating of 750V and a 105A continuous drain current (at +25°C), this device offers exceptional efficiency and thermal performance. The low on-resistance of 13mΩ (typical) and fast switching characteristics make the ROHM SCT4013DR ideal for high-frequency applications such as power supplies, inverters, and motor drives. The SCT4013DR also benefits from the inherent advantages of SiC technology, including a high breakdown voltage, low switching losses, and superior thermal conductivity, which contribute to reduced system size and improved reliability. Packaged in a TO-247-4L case, the MOSFET supports robust thermal management and ease of integration into existing designs.

750V N-Channel SiC MOSFETs

ROHM Semiconductor 750V N-Channel SiC MOSFETs can boost switching frequency, thereby decreasing the volume of capacitors, reactors, and other components required. These SiC MOSFETs are available in TO-247N, TOLL, TO-263-7L, TO-263-7LA, and TO-247-4L packages. The devices have static drain-source on-state resistance [R_DS(on)] (typ.) rating from 13mΩ to 65mΩ and continuous drain (I_D) and source current (I_S) (T_C=25°C) of 22A to 120A. These ROHM Semiconductor 750V SiC MOSFETs offer high withstand voltages, low on-resistance, and high-speed switching characteristics, leveraging the unique attributes of SiC technology.