SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
SCTW40N120G2VAG
STMicroelectronics
1:
₹1,799.31
551 In Stock
Mouser Part No
511-SCTW40N120G2VAG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
551 In Stock
1
₹1,799.31
10
₹1,163.82
100
₹994.23
600
₹992.37
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP-247-3
N-Channel
1 Channel
1.2 kV
36 A
100 mOhms
- 10 V, + 22 V
4.9 V
61 nC
- 55 C
+ 200 C
278 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
SCT012W90G3-4AG
STMicroelectronics
1:
₹2,068.60
632 In Stock
New Product
Mouser Part No
511-SCT012W90G3-4AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
632 In Stock
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-3
N-Channel
1 Channel
900 V
110 A
15.8 mOhms
- 10 V, + 22 V
3.1 V
138 nC
- 55 C
+ 200 C
625 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
SCT016H120G3AG
STMicroelectronics
1:
₹2,326.70
491 In Stock
New Product
Mouser Part No
511-SCT016H120G3AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package
491 In Stock
1
₹2,326.70
10
₹1,681.90
100
₹1,656.74
500
₹1,599.90
1,000
₹1,465.72
Buy
Min.: 1
Mult.: 1
Reel :
1,000
Details
SMD/SMT
H2PAK-7
N-Channel
1 Channel
1.2 kV
112 A
22 mOhms
- 10 V, + 22 V
3 V
150 nC
- 55 C
+ 175 C
652 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
SCT020HU120G3AG
STMicroelectronics
1:
₹2,120.78
254 In Stock
600 Expected 25-09-2026
New Product
Mouser Part No
511-SCT020HU120G3AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package
254 In Stock
600 Expected 25-09-2026
1
₹2,120.78
10
₹1,584.06
100
₹1,369.75
600
₹1,212.27
Buy
Min.: 1
Mult.: 1
Reel :
600
Details
SMD/SMT
HU3PAK-7
N-Channel
1 Channel
1.2 kV
100 A
28 mOhms
- 10 V, + 22 V
3 V
121 nC
- 55 C
555 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
360°
+6 images
SCT020W120G3-4AG
STMicroelectronics
1:
₹1,885.03
362 In Stock
Mouser Part No
511-SCT020W120G3-4AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
362 In Stock
1
₹1,885.03
10
₹1,178.73
100
₹1,120.96
Buy
Min.: 1
Mult.: 1
Details
Through Hole
Hip247-4
N-Channel
1 Channel
1.2 kV
100 A
28 mOhms
- 10 V, + 22 V
3 V
121 nC
- 55 C
+ 200 C
541 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
360°
+6 images
SCT025W120G3-4AG
STMicroelectronics
1:
₹1,897.14
305 In Stock
1,200 Expected 31-08-2026
Mouser Part No
511-SCT025W120G3-4AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
305 In Stock
1,200 Expected 31-08-2026
1
₹1,897.14
10
₹1,356.70
100
₹1,169.41
600
₹1,038.03
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP-247-4
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
- 18 V, + 18 V
4.2 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
360°
+6 images
SCT025W120G3AG
STMicroelectronics
1:
₹1,765.76
424 In Stock
Mouser Part No
511-SCT025W120G3AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
424 In Stock
1
₹1,765.76
10
₹1,098.59
100
₹1,030.57
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-3
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
- 10 V, + 22 V
3 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
360°
+6 images
SCT040W120G3AG
STMicroelectronics
1:
₹1,294.27
505 In Stock
Mouser Part No
511-SCT040W120G3AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
505 In Stock
1
₹1,294.27
10
₹909.44
100
₹694.19
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP-247-3
N-Channel
1 Channel
1.2 kV
40 A
54 mOhms
- 18 V, + 18 V
4.2 V
56 nC
- 55 C
+ 200 C
312 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
SCT055HU65G3AG
STMicroelectronics
1:
₹1,260.73
1,080 In Stock
Mouser Part No
511-SCT055HU65G3AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
1,080 In Stock
1
₹1,260.73
10
₹960.69
100
₹800.42
600
₹698.85
1,200
₹666.24
Buy
Min.: 1
Mult.: 1
Reel :
600
Details
SMD/SMT
HU3PAK-7
N-Channel
1 Channel
650 V
30 A
72 mOhms
- 10 V, + 22 V
4.2 V
29 nC
- 55 C
+ 175 C
185 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
360°
+5 images
SCT012H90G3AG
STMicroelectronics
1:
₹2,050.89
49 In Stock
1,000 Expected 17-08-2026
Mouser Part No
511-SCT012H90G3AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
49 In Stock
1,000 Expected 17-08-2026
1
₹2,050.89
10
₹1,471.31
100
₹1,336.20
500
₹1,335.27
1,000
₹1,248.61
Buy
Min.: 1
Mult.: 1
Reel :
1,000
Details
SMD/SMT
H2PAK-7
N-Channel
1 Channel
900 V
110 A
12 mOhms
- 18 V, + 18 V
4.2 V
138 nC
- 55 C
+ 175 C
625 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
SCT040HU65G3AG
STMicroelectronics
1:
₹1,270.04
115 In Stock
Mouser Part No
511-SCT040HU65G3AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A
115 In Stock
1
₹1,270.04
10
₹886.14
100
₹720.28
600
₹672.76
Buy
Min.: 1
Mult.: 1
Reel :
600
Details
SMD/SMT
H2PAK-2
N-Channel
1 Channel
650 V
7 A
40 mOhms
- 30 V, + 30 V
5 V
36 nC
- 55 C
+ 150 C
266 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
SCT011HU75G3AG
STMicroelectronics
1:
₹2,611.84
3 In Stock
1,200 On Order
New Product
Mouser Part No
511-SCT011HU75G3AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package
3 In Stock
1,200 On Order
View Dates
Stock:
3 Can Dispatch Immediately
On Order:
600 Expected 14-09-2026
600 Expected 26-03-2027
Factory Lead Time:
32 Weeks
1
₹2,611.84
10
₹1,810.49
100
₹1,713.58
600
₹1,598.97
Buy
Min.: 1
Mult.: 1
Reel :
600
Details
SMD/SMT
HU3PAK-7
N-Channel
1 Channel
750 V
110 A
15 mOhms
- 10 V, + 22 V
3.2 V
154 nC
- 55 C
+ 175 C
652 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
SCT025H120G3AG
STMicroelectronics
1:
₹1,710.78
1,997 Expected 12-10-2026
New Product
Mouser Part No
511-SCT025H120G3AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
1,997 Expected 12-10-2026
1
₹1,710.78
10
₹1,214.14
100
₹1,059.46
1,000
₹989.57
Buy
Min.: 1
Mult.: 1
Reel :
1,000
Details
SMD/SMT
H2PAK-7
N-Channel
1 Channel
1.2 kV
55 A
37 mOhms
- 10 V, + 22 V
3 V
73 nC
- 55 C
+ 175 C
375 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
SCT015W120G3-4AG
STMicroelectronics
1:
₹2,989.21
600 Expected 15-06-2026
Mouser Part No
511-SCT015W120G3-4AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
600 Expected 15-06-2026
1
₹2,989.21
10
₹2,117.05
100
₹1,971.69
600
Quote
600
Quote
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP-247-4
N-Channel
1 Channel
1.2 kV
129 A
15 mOhms
- 18 V, + 18 V
4.2 V
167 nC
- 55 C
+ 200 C
673 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
360°
+5 images
SCT040H120G3AG
STMicroelectronics
1:
₹1,270.04
996 Expected 07-09-2026
Mouser Part No
511-SCT040H120G3AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
996 Expected 07-09-2026
1
₹1,270.04
10
₹886.14
100
₹720.28
1,000
₹672.76
Buy
Min.: 1
Mult.: 1
Reel :
1,000
Details
SMD/SMT
H2PAK-7
N-Channel
1 Channel
1.2 kV
40 A
54 mOhms
- 18 V, + 18 V
4.2 V
54 nC
- 55 C
+ 175 C
300 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
SCT040HU120G3AG
STMicroelectronics
1:
₹1,346.45
1,200 On Order
New Product
Mouser Part No
511-SCT040HU120G3AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HU3PAK package
1,200 On Order
View Dates
Factory Lead Time:
32 Weeks
1
₹1,346.45
10
₹942.98
100
₹830.23
600
₹735.19
Buy
Min.: 1
Mult.: 1
Reel :
600
Details
SMD/SMT
HU3PAK-7
N-Channel
1 Channel
1.2 kV
40 A
72 mOhms
- 10 V, + 22 V
3 V
54 nC
- 55 C
+ 175 C
300 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
360°
+6 images
SCT070HU120G3AG
STMicroelectronics
1:
₹1,348.31
1,199 Expected 02-07-2026
Mouser Part No
511-SCT070HU120G3AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
1,199 Expected 02-07-2026
1
₹1,348.31
10
₹953.23
100
₹788.30
600
₹736.12
Buy
Min.: 1
Mult.: 1
Reel :
600
Details
SMD/SMT
HU3PAK-7
N-Channel
1 Channel
1.2 kV
30 A
87 mOhms
- 18 V, + 18 V
4.2 V
37 nC
- 55 C
+ 175 C
223 W
Enhancement
AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
SCT040W120G3-4
STMicroelectronics
1:
₹1,267.25
100 On Order
New Product
Mouser Part No
511-SCT040W120G3-4
New Product
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
100 On Order
1
₹1,267.25
10
₹884.28
100
₹801.35
500
₹748.24
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
40 A
54 mOhms
- 10 V, + 22 V
3.1 V
56 nC
- 55 C
+ 200 C
312 W
Enhancement
AEC-Q101