NXH011F120M3F2 SiC MOSFETs

onsemi NXH011F120M3F2 EliteSiC SiC MOSFET Modules is equipped with an 11mΩ/1200V SiC M3S MOSFET full-bridge configuration. The modules integrate a thermistor and an HPS DBC in an F2 package, enabling compact, high-efficiency power-conversion designs. The onsemi NXH011F120M3F2 offers two types of pre-applied thermal interface material and one without pre-applied TIM. The modules also feature press-fit pins and Pb-free, halide-free, and RoHS-compliant construction for power module integration.

Results: 6
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 Mfr.
Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Packaging
onsemi MOSFET Modules Silicon Carbide (SiC) Module EliteSiC, 11 mohm SiC M3S MOSFET, 1200 V, new Tim, 4-PACK Full Bridge Topology, F2 Package
Datasheet
20Expected 24-11-2026
Min.: 1
Mult.: 1
Max.: 2

SiC Press Fit N-Channel 4 Channel 1.2 kV 105 A 16 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 244 W Tray
onsemi MOSFET Modules Silicon Carbide (SiC) Module, 11 mohm SiC M3S MOSFET, 1200 V, new TIM, TNPC Topology in F2 Package
Datasheet
20Expected 24-11-2026
Min.: 1
Mult.: 1
Max.: 2

SiC Press Fit N-Channel 4 Channel 1.2 kV 91 A 16 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 272 W Tray
onsemi MOSFET Modules 15 mohm SiC M3S MOSFET, 1200 V, new TIM, 4-PACK Full Bridge Topology,F1Package
Datasheet
28Expected 15-09-2026
Min.: 1
Mult.: 1
Max.: 3

SiC Press Fit N-Channel 4 Channel 1.2 kV 77 A 19 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 198 W Tray
onsemi MOSFET Modules EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
Datasheet
28Expected 16-02-2027
Min.: 1
Mult.: 1
Max.: 3

SiC Press Fit N-Channel 2 Channel 1.2 kV 200 A 9 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 333 W Tray
onsemi MOSFET Modules EliteSiC, 6 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
Datasheet
28Expected 16-02-2027
Min.: 1
Mult.: 1
Max.: 3

SiC Press Fit N-Channel 2 Channel 1.2 kV 240 A 9 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 500 W Tray
onsemi MOSFET Modules EliteSiC, 8 m , 1200 V, SiC M3 MOSFET, 2-PACK Half Bridge Topology, F1 Package
Datasheet
28Expected 16-02-2027
Min.: 1
Mult.: 1
Max.: 3

SiC Press Fit N-Channel 2 Channel 1.2 kV 145 A 10.9 mOhms - 10 V, + 22 V 4.4 V - 40 C + 175 C 382 W Tray