MMBT3906T RSG

Taiwan Semiconductor
821-MMBT3906TRSG
MMBT3906T RSG

Mfr.:

Description:
Bipolar Transistors - BJT -40, -0.2, NPN Bipolar Transistor

ECAD Model:
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In Stock: 5,930

Stock:
5,930 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
₹18.87 ₹18.87
₹11.32 ₹113.20
₹7.10 ₹710.00
₹5.21 ₹2,605.00
₹4.58 ₹4,580.00
Full Reel (Order in multiples of 3000)
₹3.68 ₹11,040.00
₹3.32 ₹19,920.00
₹2.70 ₹24,300.00
₹2.61 ₹62,640.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOT-523-3
PNP
Single
200 mA
40 V
40 V
5 V
400 mV
150 mW
- 55 C
+ 150 C
Reel
Cut Tape
MouseReel
Brand: Taiwan Semiconductor
Continuous Collector Current: 200 mA
DC Collector/Base Gain hFE Min: 30
DC Current Gain hFE Max: 300
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
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Attributes selected: 0

CAHTS:
8541210000
USHTS:
8541210075
JPHTS:
854121000
KRHTS:
8541219000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

MMBT3906T PNP Bipolar Transistor

Taiwan Semiconductor MMBT3906T PNP Bipolar Transistor is an epitaxial planar type transistor with improved electrical conductivity. This transistor is designed with -40V of collector-to-base voltage (VCBO), -40V of collector-to-emitter voltage (VCEO), and -5V of emitter-to-base voltage (VEBO). The MMBT3906T PNP transistor features a collector current of -200mA and power dissipation (PD) of 150mW. This transistor is halogen-free according to IEC 61249-2-21 standards and RoHS compliant. Some of the applications include consumer electronics, low-frequency amplifiers, and drivers.