SBR15U50SP5-13

Diodes Incorporated
621-SBR15U50SP5-13
SBR15U50SP5-13

Mfr.:

Description:
Schottky Diodes & Rectifiers 15A SBR SUPER BARRIER RECTIFIER

ECAD Model:
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In Stock: 8,546

Stock:
8,546 Can Dispatch Immediately
Factory Lead Time:
24 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 5000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
₹92.54 ₹92.54
₹63.34 ₹633.40
₹39.08 ₹3,908.00
₹34.32 ₹17,160.00
₹34.23 ₹34,230.00
₹33.60 ₹84,000.00
Full Reel (Order in multiples of 5000)
₹27.94 ₹1,39,700.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Diodes Incorporated
Product Category: Schottky Diodes & Rectifiers
RoHS:  
REACH - SVHC:
Schottky Rectifiers
SMD/SMT
PowerDI5-3
Single Dual Anode
Si
15 A
50 V
520 mV
256 A
500 uA
- 65 C
+ 150 C
SBR15U5
Reel
Cut Tape
MouseReel
Brand: Diodes Incorporated
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 5000
Subcategory: Diodes & Rectifiers
Tradename: POWERDI
Vr - Reverse Voltage: 50 V
Unit Weight: 96 mg
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Attributes selected: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

15A Super Barrier Rectifier

Diodes Incorporated 15A Super Barrier Rectifier delivers a very low forward voltage with excellent reverse leakage stability at high temperatures. Diodes Incorporated 15A Super Barrier Rectifier is ideal for thin applications, with a 1.1mm case height and a thermally efficient package. Applications include rectification, freewheeling, or as a polarity protection diode.

SBR® Super Barrier Rectifiers

Diodes Inc SBR® Super Barrier Rectifiers use a MOS manufacturing process to create a superior two-terminal device with a lower forward voltage than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes. SBR Diodes are designed for high power, low loss and fast switching applications. The presence of a MOS channel within its structure forms a low potential barrier for the majority carriers. That means SBR forward bias operation at low voltage is similar to a Schottky diode. The leakage current is lower than Schottky Diode in reverse bias due to the overlap of the P-N depletion layers and the absence of potential barrier reduction due to the image charge.