HB Trench Gate Field-Stop IGBTs

STMicroelectronics HB Trench Gate Field-Stop IGBTs use an advanced proprietary trench gate and field stop structure. These HB devices represent a compromise of conduction and switching losses to maximize frequency converter efficiency. A slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

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Qty. RoHS ECAD Model Technology
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Mounting Style
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
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STMicroelectronics IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
Datasheet
3,169In Stock
Min.: 1
Mult.: 1

Si TO-220-3 Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGP30H60DFB Tube
STMicroelectronics IGBTs Trench gate field-stop 600 V, 30 A high speed HB series IGBT
Datasheet
79In Stock
1,000Expected 04-05-2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1,000

Si D2PAK-3 SMD/SMT Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGB30H60DFB Reel, Cut Tape, MouseReel