MRF101 RF Power LDMOS Transistors

NXP Semiconductors MRF101 RF Power LDMOS Transistors are highly-rugged N-channel enhancement mode lateral MOSFETs designed to exhibit high performance up to 250MHz. These transistors integrate ESD protection with a greater negative gate-source voltage range for improved Class C operation. Both the transistors come in two pin-out versions mirroring each other to support push-pull configurations for further flexibility. The MRF101 transistors are ideal for high Voltage Standing Wave Ratio (VSWR) industrial, scientific, and medical applications.

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Qty. RoHS ECAD Model Transistor Polarity
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
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NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Datasheet
3,618In Stock
Min.: 1
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N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V
Datasheet
253In Stock
Min.: 1
Mult.: 1
No
N-Channel Si 8.8 A 133 V 1.8 MHz to 250 MHz 21.1 dB 115 W - 40 C + 150 C Through Hole TO-220-3 Tube