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BST400D12P4A101

Name: ROHM Semiconductor BST400D12P4A101
Brand: ROHM Semiconductor
SKU: 755-BST400D12P4A101
Price: 53274.22 INR
Availability: OutOfStock

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Mouser No:

755-BST400D12P4A101

Mfr. No:

BST400D12P4A101

Mfr.:

ROHM Semiconductor

Description:

MOSFET Modules half-bridge module consisting of SiC-MOSFETs, suitable for Automotive application, Inverter, Converter, and (Hybrid) electrical vehicles EV/HEV.

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

BST400D12P4A101 Datasheet

ECAD Model:

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Availability

Stock:: 0

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On Order:: 80

Expected 22-10-2026
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹53,274.22	₹53,274.22
	₹47,431.93	₹4,74,319.30

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFET Modules
Technology:	SiC
Mounting Style:	Press Fit
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	394 A
Rds On - Drain-Source Resistance:	8.6 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.667 kW
Packaging:	Bulk
Brand:	ROHM Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Fall Time:	42 ns
Product:	Power Module
Product Type:	MOSFET Modules
Rise Time:	102 ns
Factory Pack Quantity:	80
Subcategory:	Discrete and Power Modules
Tradename:	EcoSiC
Typical Turn-Off Delay Time:	198 ns
Typical Turn-On Delay Time:	119 ns

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Datasheet

BST400D12P4A101 Datasheet

Specification Sheets

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USHTS:: 8541590080
ECCN:: EAR99

BST400D12P4A1x1 TRCDRIVE pack™ with Molded Modules

ROHM Semiconductor BST400D12P4A101 and BST400D12P4A111 TRCDRIVE pack™ with 2-in-1 SiC Molded Modules feature 1200V rated voltage in a compact package with 41.6mm × 52.5mm dimensions. These modules integrate 4th Generation SiC MOSFETs for a power-dense design that greatly reduces the size of electric vehicle (xEV) inverters. ROHM Semiconductor BST400D12P4A101 and BST400D12P4A111 modules support up to 300kW and feature a terminal configuration designed to meet the critical challenges of traction inverters regarding miniaturization, higher efficiency, and fewer person-hours. These modules do not require soldering for the signal terminals, offering ease of use for designers.

High-Density SiC Power Modules

ROHM Semiconductor High-Density Silicon Carbide (SiC) Power Modules are designed to support high-efficiency power conversion in automotive and industrial applications. The lineup includes several package platforms such as TRCDRIVE pack™, HSDIP20, and DOT-247, each optimized for different power classes and system requirements. These packages integrate SiC MOSFETs into compact module structures that enable high power density, stable switching performance, and efficient thermal management. Depending on the package, configurations such as 2-in-1, 4-in-1, and 6-in-1 are available, providing flexibility for a wide range of power conversion and motor drive applications.