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RM10N100LDV-T

Name: Rectron RM10N100LDV-T
Brand: Rectron
SKU: 583-RM10N100LDV-T
Price: 88.04 INR
Availability: OutOfStock

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See Product Specifications

Mouser No:

583-RM10N100LDV-T

Mfr. No:

RM10N100LDV-T

Mfr.:

Rectron

Description:

MOSFETs

Datasheet:

RM10N100LDV-T Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Rectron RM10N100LDV-T

Availability

Stock:: 0

You can still purchase this product for backorder.

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On Order:: 2,500

Expected 05-05-2026
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹88.04	₹88.04
	₹54.80	₹548.00
	₹35.76	₹3,576.00
	₹27.49	₹13,745.00
	₹25.60	₹25,600.00
Full Reel (Order in multiples of 2500)
	₹21.65	₹54,125.00
	₹20.12	₹1,00,600.00
	₹18.60	₹1,86,000.00
	₹18.06	₹4,51,500.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Rectron
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-2
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	130 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	21.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Rectron
Configuration:	Single
Fall Time:	9.1 ns
Forward Transconductance - Min:	3.5 S
Product Type:	MOSFETs
Rise Time:	7.4 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

RM10N100LDV-T Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RM10N100LD N-Channel Enhancement Mode Power MOSFET

Rectron RM10N100LD N-Channel Enhancement Mode Power MOSFET uses trench technology to provide excellent RDS(ON) with a low gate charge. The device can be used in various applications.