CUHS10F60,H3F

Toshiba
757-CUHS10F60H3F
CUHS10F60,H3F

Mfr.:

Description:
Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Toshiba CUHS10F60,H3F

Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
5,981
Expected 02-03-2026
Factory Lead Time:
14
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (INR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
₹22.46 ₹22.46
₹18.96 ₹189.60
₹12.67 ₹1,267.00
₹9.43 ₹4,715.00
₹8.27 ₹8,270.00
Full Reel (Order in multiples of 3000)
₹5.66 ₹16,980.00
₹5.39 ₹32,340.00
₹5.03 ₹45,270.00
₹4.94 ₹1,18,560.00
† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: Schottky Diodes & Rectifiers
RoHS:  
Single
Reel
Cut Tape
MouseReel
Brand: Toshiba
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 3000
Subcategory: Diodes & Rectifiers
Unit Weight: 5.400 mg
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

CNHTS:
8541100000
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

CUHS10F60 Schottky Barrier Diode

Toshiba CUHS10F60 Schottky Barrier Diode (SBD) is designed for high-speed switching applications with high breakdown voltage and low reverse current. This SBD provides a maximum reverse voltage of 60V and an average rectified current of 1A. The CUHS10F60 diode features a storage temperature range from -55°C to +150°C and a maximum junction temperature of +150°C. The Toshiba CUHS10F60 SBD also features a reverse leakage current of 0.04mA when the reverse voltage is 60V.

CUHSx Schottky Barrier Diodes

Toshiba CUHSx Schottky Barrier Diodes (SBDs) are suitable for rectifying power supply circuits and protecting reverse currents. These diodes are high-speed switching devices that incorporate Si technology and use a US2H package to achieve low-thermal resistance. These SBDs offer a reverse leakage greater than other types of diodes making them more susceptible to thermal runaway under high-temperature and high-voltage conditions. To improve the efficiency of power supply use, these SBDs are required to have low forward voltage and low reverse current. The DC-DC boost converter ICs are used in voltage-boosting circuits for driving LCD backlight LEDs in portable devices like smartphones, tablets, and notebook PCs. In addition to the DC-DC converter circuits, Toshiba CUHSx Schottky Barrier Diodes are also used in applications such as motor driver circuits, MOSFET gate driver circuits, and freewheeling diodes.

Small Signal Schottky Barrier Diodes

Toshiba Small Signal Schottky Barrier Diodes come in a variety of packages, voltages, and current ratings to meet a variety of design requirements. Voltages range from 10V to 60V with current ratings from 0.05A to 2A. Toshiba Small Signal Schottky Barrier Diodes feature high-speed switching and a low leakage current.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.