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RF4G100BGTCR

Name: ROHM Semiconductor RF4G100BGTCR
Brand: ROHM Semiconductor
SKU: 755-RF4G100BGTCR
Price: 123.08 INR
Availability: InStock

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Mouser No:

755-RF4G100BGTCR

Mfr. No:

RF4G100BGTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs DFN2020 N-CH 40V 10A

Datasheet:

RF4G100BGTCR Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RF4G100BGTCR

In Stock: 8,342

Stock:: 8,342 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹123.08	₹123.08
	₹77.62	₹776.20
	₹51.39	₹5,139.00
	₹40.16	₹20,080.00
	₹36.48	₹36,480.00
Full Reel (Order in multiples of 3000)
	₹31.89	₹95,670.00
	₹29.56	₹1,77,360.00
	₹27.94	₹2,51,460.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-2020-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	14.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	10.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	4.5 ns
Forward Transconductance - Min:	5.2 S
Product Type:	MOSFETs
Rise Time:	6.5 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	8.5 ns
Part # Aliases:	RF4G100BG

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Datasheet

RF4G100BGTCR Datasheet

Specification Sheets

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CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RF4G100BG N-Channel Power MOSFET

ROHM Semiconductor RF4G100BG N-Channel Power MOSFET is a 40V, 10A MOSFET featuring a low 14.2mΩ on-resistance, making it ideal for switching applications. The RF4G100BG has a 27ns (typical) reverse recovery time and an 18nC (typical) reverse recovery charge. Power dissipation for the device is 2.0W, and it features a wide -55℃ to +150℃ operating junction and storage temperature range.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.