It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVMJD010N10MCLTWG

Name: onsemi NVMJD010N10MCLTWG
Brand: onsemi
SKU: 863-VMJD010N10MCLTWG
Price: 296.47 INR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

863-VMJD010N10MCLTWG

Mfr. No:

NVMJD010N10MCLTWG

Mfr.:

onsemi

Description:

MOSFETs PTNG 100V N-CH LL IN LFPA

Datasheet:

NVMJD010N10MCLTWG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVMJD010N10MCLTWG

In Stock: 2,297

Stock:: 2,297 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹296.47	₹296.47
	₹192.26	₹1,922.60
	₹141.05	₹14,105.00
	₹118.59	₹59,295.00
	₹112.30	₹1,12,300.00
Full Reel (Order in multiples of 3000)
	₹102.42	₹3,07,260.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	62 A
Rds On - Drain-Source Resistance:	10 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	26.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	84 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Dual
Fall Time:	28 ns
Forward Transconductance - Min:	61 S
Product Type:	MOSFETs
Rise Time:	32 ns
Series:	NVMJD010N10MCL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	68 ns
Typical Turn-On Delay Time:	8 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVMJD010N10MCLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

NVMJD010N10MCL Power MOSFET

onsemi NVMJD010N10MCL Power MOSFET is a dual, N-Channel MOSFET designed for compact and efficient designs, including high thermal performance. This power MOSFET operates at 100V drain-to-source voltage, 10mΩ drain resistance, and 62A continuous drain current. The NVMJD010N10MCL MOSFET features low total gate charge (Q_G) and capacitance to minimize driver losses. This MOSFET comes in a 5mm x 6mm flat lead package and is an AEC-Q101-qualified MOSFET. The device is Pb-free, halogen-free/BFR-free, Beryllium-free, and RoHS-compliant. This power MOSFET is ideal for solenoid drivers low side/high side drivers, automotive engine controllers, and antilock braking systems.