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SIR186LDP-T1-RE3

Name: Vishay SIR186LDP-T1-RE3
Brand: Vishay / Siliconix
SKU: 78-SIR186LDP-T1-RE3
Price: 135.66 INR
Availability: InStock

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Mouser No:

78-SIR186LDP-T1-RE3

Mfr. No:

SIR186LDP-T1-RE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs PPAKSO8 N-CH 60V 23.8A

Datasheet:

SIR186LDP-T1-RE3 Datasheet

ECAD Model:

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In Stock: 31,109

Stock:: 31,109 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹135.66	₹135.66
	₹85.71	₹857.10
	₹57.59	₹5,759.00
	₹45.28	₹22,640.00
	₹41.24	₹41,240.00
Full Reel (Order in multiples of 3000)
	₹36.21	₹1,08,630.00
	₹33.69	₹2,02,140.00
	₹32.52	₹2,92,680.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerPAK SO-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	80.3 A
Rds On - Drain-Source Resistance:	4.4 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	31.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	57 W
Channel Mode:	Enhancement
Tradename:	TrenchFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Vishay / Siliconix
Configuration:	Single
Fall Time:	6 ns
Forward Transconductance - Min:	54 S
Product Type:	MOSFETs
Rise Time:	6 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

SIR186LDP-T1-RE3 Datasheet

Technical Resources

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CNHTS:: 8541290000
TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

SiR186LDP N-Channel 60V (D-S) MOSFETs

Vishay / Siliconix SiR186LDP N-Channel 60V (D-S) MOSFETs utilize TrenchFET^® Gen IV power MOSFET technology. The SiR186LDP MOSFETs feature very low R_DS Q_g figure-of-merit (FOM) and are tuned for the lowest R_DS Q_oss FOM. The Vishay / Siliconix SiR186LDP N-Channel 60V (D-S) MOSFETs are ideal for synchronous rectification, primary-side switch, DC/DC converter, and motor drive switch applications.