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TP65H070G4RS-TR

Name: Renesas Electronics TP65H070G4RS-TR
Brand: Renesas Electronics
SKU: 227-TP65H070G4RS-TR
Price: 716.02 INR
Availability: InStock

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Mouser No:

227-TP65H070G4RS-TR

Mfr. No:

TP65H070G4RS-TR

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 70mohm GaN FET in TOLT

Lifecycle:

New At Mouser

Datasheet:

TP65H070G4RS-TR Datasheet

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Learn more about Renesas Electronics TP65H070G4RS-TR

In Stock: 1,696

Stock:: 1,696 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹716.02	₹716.02
	₹486.93	₹4,869.30
	₹375.53	₹37,553.00
Full Reel (Order in multiples of 1300)
	₹306.35	₹3,98,255.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TOLT-16
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	29 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	9 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	96 W
Channel Mode:	Enhancement
Tradename:	SuperGaN
Brand:	Renesas Electronics
Configuration:	Single
Fall Time:	7.2 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	GaN FETs
Rise Time:	6.2 ns
Series:	Gen IV SuperGaN
Factory Pack Quantity:	1300
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	56 ns
Typical Turn-On Delay Time:	43.4 ns

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Datasheet

TP65H070G4RS-TR Datasheet

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CNHTS:: 8541290000
ECCN:: EAR99

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN^® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

TP65H070G4RS 650V SuperGaN® FET in TOLT

Renesas Electronics TP65H070G4RS 650V SuperGaN^® FET in TOLT features an on-resistance R_DS(on) of 72mΩ typical in a top-side-cooled, surface-mount TOLT package that meets the JEDEC standard MO-332. The TOLT package offers thermal management flexibility, especially in systems that do not allow for conventional surface-mount devices with bottom-side cooling. The TP65H070G4RS is a normally-off device that combines low-voltage silicon MOSFET and high-voltage GaN HEMT technologies to deliver superior reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxial (epi) and patented design technologies to streamline manufacturability and enhance efficiency compared to silicon. It achieves this by reducing gate charge, crossover loss, output capacitance, and reverse recovery charge. Renesas Electronics TP65H070G4RS 650V SuperGaN TOLT FET is ideal for datacom, industrial, computing, and other applications.