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RF4L070BGTCR

Name: ROHM Semiconductor RF4L070BGTCR
Brand: ROHM Semiconductor
SKU: 755-RF4L070BGTCR
Price: 123.08 INR
Availability: InStock

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Mouser No:

755-RF4L070BGTCR

Mfr. No:

RF4L070BGTCR

Mfr.:

ROHM Semiconductor

Description:

MOSFETs DFN2020 N-CH 60V 7A

Datasheet:

RF4L070BGTCR Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RF4L070BGTCR

In Stock: 583

Stock:: 583

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On Order:: 3,000

Expected 16-06-2026

6,000

Expected 18-06-2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+₹475.00)

Pricing (INR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	₹123.08	₹123.08
	₹77.62	₹776.20
	₹51.39	₹5,139.00
	₹40.16	₹20,080.00
	₹36.56	₹36,560.00
Full Reel (Order in multiples of 3000)
	₹31.35	₹94,050.00
	₹29.56	₹1,77,360.00
	₹27.94	₹2,51,460.00

† A MouseReel™ fee of ₹475.00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-2020-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	7 A
Rds On - Drain-Source Resistance:	27 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	7.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	2 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	4.4 ns
Forward Transconductance - Min:	2.5 S
Product Type:	MOSFETs
Rise Time:	5.7 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	21 ns
Typical Turn-On Delay Time:	8.7 ns
Part # Aliases:	RF4L070BG

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Datasheet

RF4L070BGTCR Datasheet

Specification Sheets

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

RF4L070BG N-Channel Power MOSFET

ROHM Semiconductor RF4L070BG N-Channel Power MOSFET is a 60.0V, 7.0A MOSFET featuring a low 27.0mΩ on-resistance, making it ideal for switching applications. The RF4L070BG has a 25.0ns (typical) reverse recovery time and a 22.0nC (typical) reverse recovery charge. Power dissipation for the device is 2.0W, and it features a wide -55℃ to +150℃ operating junction and storage temperature range.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.