MRF1K50N 1500W RF Power Transistors

NXP MRF1K50N and MRF1K50GNR5 1500W RF Power Transistors combine high RF output power, superior ruggedness, and thermal performance. These LDMOS devices feature an over-molded plastic package, offering up to 30% lower thermal resistance compared with the ceramic MRF1K50H. NXP's plastic packaging technology helps extract more performance from RF transistors while simplifying amplifier manufacturability thanks to tighter dimensional tolerances and better solder connections. 

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Transistor Polarity Technology Id - Continuous Drain Current Vds - Drain-Source Breakdown Voltage Operating Frequency Gain Output Power Minimum Operating Temperature Maximum Operating Temperature Mounting Style Package/Case Packaging
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V 41In Stock
Min.: 1
Mult.: 1
Reel: 50

N-Channel Si 36 A 133 V 1.8 MHz to 500 MHz 23 dB 1.5 kW - 40 C + 150 C SMD/SMT OM-1230-4 Reel, Cut Tape
NXP Semiconductors RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V Non-Stocked Lead-Time 10 Weeks
Min.: 50
Mult.: 50
Reel: 50

N-Channel Si 36 A 133 V 1.8 MHz to 500 MHz 23 dB 1.5 kW - 40 C + 150 C SMD/SMT OM-1230G-4 Reel