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NVHL075N065SC1

Name: onsemi NVHL075N065SC1
Brand: onsemi
SKU: 863-NVHL075N065SC1
Price: 1130.19 INR
Availability: InStock

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Mouser No:

863-NVHL075N065SC1

Mfr. No:

NVHL075N065SC1

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-3L 650V 75MOHM

Datasheet:

NVHL075N065SC1 Datasheet

ECAD Model:

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Learn more about onsemi NVHL075N065SC1

In Stock: 366

Stock:: 366 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹1,130.19	₹1,130.19
	₹730.40	₹7,304.00
	₹714.23	₹85,707.60

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	85 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4.3 V
Qg - Gate Charge:	61 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	74 W
Channel Mode:	Enhancement
Tradename:	EliteSiC
Brand:	onsemi
Fall Time:	8 ns
Forward Transconductance - Min:	9 S
Packaging:	Tube
Product:	Mosfets
Product Type:	SiC MOSFETS
Rise Time:	26 ns
Series:	NVHL075N065SC1
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	22 ns
Typical Turn-On Delay Time:	10 ns

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Datasheet

NVHL075N065SC1 Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

M2 EliteSiC MOSFETs

onsemi M2 EliteSiC MOSFETs feature voltage options of 650V, 750V, and 1200V. The onsemi M2 MOSFETs come in various packages, including D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, and TO-247-4LD. The MOSFETs provide flexibility in design and implementation. Additionally, the M2 EliteSiC MOSFETs boast a maximum gate-to-source voltage of +22V/-8V, low R_DS(on), and high short circuit withstand time (SCWT).

NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs

onsemi NVHL075N065SC1 Silicon Carbide (SiC) MOSFETs are high-performance devices with exceptional characteristics. The onsemi NVHL075N065SC1 offers a typical R_DS(on) of 57mΩ at a gate-source voltage (V_GS) of 18V and 75mΩ at 15V. The device features ultra-low gate charge (Q_G(tot) = 61nC) and low output capacitance (C_oss = 107pF), ensuring fast switching and reduced power losses.