It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

RH7G04CBJFRATCB

Name: ROHM Semiconductor RH7G04CBJFRATCB
Brand: ROHM Semiconductor
SKU: 755-RH7G04CBJFRATCB
Price: 198.47 INR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

755-RH7G04CBJFRATCB

Mfr. No:

RH7G04CBJFRATCB

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Pch -40V -40A, DFN3333T8LSAB, Power MOSFET for Automotive

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

RH7G04CBJFRATCB Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about ROHM Semiconductor RH7G04CBJFRATCB

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 6,000

Expected 30-09-2026
Factory Lead Time:: 16

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

₹-.--

Ext. Price:

₹-.--

Est. Tariff:

Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹198.47	₹198.47
	₹127.66	₹1,276.60
	₹85.63	₹8,563.00
	₹68.02	₹34,010.00
	₹62.34	₹62,340.00
Full Reel (Order in multiples of 3000)
	₹56.00	₹1,68,000.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-8
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	17.7 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	33 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	62 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	33 ns
Forward Transconductance - Min:	13 S
Product Type:	MOSFETs
Rise Time:	16 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	115 ns
Typical Turn-On Delay Time:	11 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

RH7G04CBJFRATCB Datasheet

Other

This functionality requires JavaScript to be enabled.

Compliance Codes

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

125°C I2C BUS EEPROMs for 2-Wire Automotive

ROHM Semiconductor 125°C I²C BUS EEPROMs for 2-Wire Automotive are AEC-Q100 qualified. The ROHM I²C BUS EEPROMs feature two ports of Serial Clock (SCL) and Serial Data (SDA) that all controls are available through. The EEPROMs operate from a wide limit of 1.7V to 5.5V, with a possible 1MHz operation.

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

RH7G04CBJFRA P-Ch Power MOSFET

ROHM Semiconductor RH7G04CBJFRA P-Ch Power MOSFET is AEC-Q101 qualified for automotive applications, including infotainment, lighting, ADAS, and body. The device offers a -40V drain-source voltage and ±40A continuous drain current. The ROHM RH7G04CBJFRA MOSFET is available in a DFN-8 package.