MAAP-011139-DIE

MACOM
937-MAAP-011139-DIE
MAAP-011139-DIE

Mfr.:

Description:
RF Amplifier 29-31GHz 4Watt Gain 24dB GaAs

Lifecycle:
Factory Special Order:
Obtain a quote to verify the current price, lead-time and ordering requirements of the manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
This item may require additional fees and documentation. Customs delays may also occur.

Availability

Stock:
Not Available

Pricing (INR)

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: RF Amplifier
Delivery Restrictions:
 This item may require additional fees and documentation. Customs delays may also occur.
RoHS:  
30 GHz
6 V
3.2 A
24 dB
Power Amplifiers
Die
GaAs
34.5 dBm
36.5 dBm
- 40 C
+ 85 C
Gel Pack
Brand: MACOM
Input Return Loss: 10 dB
Product Type: RF Amplifier
Factory Pack Quantity: 25
Subcategory: Wireless & RF Integrated Circuits
Test Frequency: 30 GHz
Unit Weight: 1.207 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

                        
M/A Com Die products:

Mouser is not authorized to break pack on these products.

Please contact your Mouser Technical Representative for further
information.

5-0312-4

Compliance Codes
CNHTS:
8542339000
CAHTS:
8542330000
USHTS:
8542330001
JPHTS:
8542330996
KRHTS:
8532331000
TARIC:
8542330000
MXHTS:
8542330201
ECCN:
EAR99
Origin Classifications
Country of Origin:
Taiwan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

MAAP-011139-DIE 4W Power Amplifier

MACOM MAAP-011139-DIE is a 4-stage, 4W power amplifier in bare die form. This power amplifier operates from 29 to 31GHz. It provides 24dB of linear gain, 4W saturated output power, and 23% efficiency while biased at 6V. The MAAP-011139-DIE power amplifier is ideally suited for VSAT communications. It's fabricated using a GaAs pHEMT device process which features full passivation for enhanced reliability.
Learn More