NCD57001FDWR2G

onsemi
863-NCD57001FDWR2G
NCD57001FDWR2G

Mfr.:

Description:
Galvanically Isolated Gate Drivers ISOLATED HIGH CURRENT IGBT GATE DRIVER WITH FAST STO

Datasheet:
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In Stock: 1,738

Stock:
1,738 Can Dispatch Immediately
Factory Lead Time:
21 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹504.90 ₹504.90
₹340.49 ₹3,404.90
₹314.44 ₹7,861.00
₹254.25 ₹25,425.00
₹244.36 ₹61,090.00
₹227.30 ₹1,13,650.00
Full Reel (Order in multiples of 1000)
₹212.92 ₹2,12,920.00
₹204.84 ₹4,09,680.00

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: Galvanically Isolated Gate Drivers
RoHS:  
NCD57001FDWR2G
SMD/SMT
- 40 C
+ 125 C
10 ns
15 ns
Reel
Cut Tape
Brand: onsemi
Configuration: Inverting, Non-Inverting
Number of Drivers: 1 Driver
Number of Outputs: 1 Output
Output Current: 6 A
Product: IGBT, MOSFET Gate Drivers
Product Type: Galvanically Isolated Gate Drivers
Factory Pack Quantity: 1000
Subcategory: PMIC - Power Management ICs
Supply Voltage - Max: 5 V
Supply Voltage - Min: 3.3 V
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Attributes selected: 0

Datasheet

CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99

Heat Pumps

The heat pump stands as a cornerstone of the global shift towards secure and sustainable heating, harnessing low-emissions electricity to provide reliable warmth. While its primary function is heating, innovative reverse cycle models also offer cooling capabilities. Moreover, by efficiently recovering waste heat and elevating its temperature to practical levels, heat pumps hold immense potential for energy conservation. As businesses pivot towards a low-carbon future, there's a growing demand for more efficient power semiconductors. Balancing cost, footprint, and efficiency is paramount in this pursuit. onsemi Intelligent Power Modules (IPMs) emerge as a noteworthy solution within the heat pump market, offering compact design, high power density, and advanced control features.

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCD57001FDWR2G Isolated IGBT Gate Drivers

onsemi NCD57001FDWR2G Isolated High-Current IGBT Gate Drivers are single-channel IGBT drivers with internal galvanic isolation designed for high system efficiency and reliability. This gate driver features complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate undervoltage lockouts (UVLOs), DESAT protection, and soft turn-off at DESAT. onsemi NCD57001FDWR2G gate drivers accommodate 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. This gate driver provides >5kVrms (UL1577 rating) galvanic isolation and >1200Viorm (working voltage) capabilities. Typical applications include solar inverters, motor control, uninterruptible power supplies (UPS), industrial power supplies, and welding.

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