650V EliteSiC (Silicon Carbide) MOSFETs

onsemi 650V EliteSiC (Silicon Carbide) MOSFETs use a technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include the highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size. The onsemi TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).

Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
onsemi SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L INDUSTRIAL 446In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 71 A 23.5 mOhms - 10 V, 22.6 V 4 V 100 nC - 55 C + 175 C 300 W Enhancement EliteSiC
onsemi SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L Auto 450In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 71 A 23.5 mOhms - 10 V, 22.6 V 4 V 100 nC - 55 C + 175 C 300 W Enhancement EliteSiC
onsemi SiC MOSFETs M2 650V SIC MOSFET 60MOHM WITH TOLL 1,983In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT SO-8 N-Channel 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22.6 V 4.3 V 74 nC - 55 C + 170 C 170 W Enhancement EliteSiC
onsemi SiC MOSFETs M2 650V SIC MOSFET 75MOHM WITH TOLL 1,970In Stock
Min.: 1
Mult.: 1
Reel: 2,000

SMD/SMT SO-8 N-Channel 1 Channel 650 V 37 A 85 mOhms - 8 V, + 22.6 V 4.3 V 59 nC - 55 C + 170 C 139 W Enhancement EliteSiC
onsemi SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L Auto
450Expected 06-03-2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 102 A 17 mOhms - 10 V, 22.6 V 4 V 135 nC - 55 C + 175 C 375 W Enhancement EliteSiC
onsemi SiC MOSFETs EliteSiC, 12 mohm SiC M3S MOSFET, 650 V, TO247-4L INDUSTRIAL
450Expected 02-03-2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 102 A 17 mOhms - 10 V, 22.6 V 4 V 135 nC - 55 C + 175 C 375 W Enhancement EliteSiC