RN Automotive Bias Resistor Built-in Transistors

Toshiba RN Automotive Bias Resistor Built-in Transistors (BRT) are AEC-Q101 qualified and optimized for switching, inverter circuit, interfacing, and driver circuit applications. The bias resistor is integrated, reducing the number of external parts required and decreasing system size and assembly time. The Toshiba RN Automotive Bias Resistor BRTs provide a wide resistance range to adjust to various circuit designs.

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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:70-140 SOT-346 (S-Mini)
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5,779In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-346 (S-Mini)
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8,229In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-323 (USM)
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7,177In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-323 (USM)
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487In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-416 (SSM)
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2,880In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-416 (SSM)
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5,850In Stock
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Mult.: 1
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:350-700 SOT-346 (S-Mini)
Datasheet
7,483In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:200-400 SOT-346 (S-Mini)
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8,330In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-346 (S-Mini)
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7,007In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:200-4000 SOT-323 (USM)
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2,874In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:120-240 SOT-323 (USM)
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5,892In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN Tr VCEO:50V Ic:0.15A hFE:120-700 SOT-416 (SSM)
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6,676In Stock
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Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:9pF VBR:26V @1mA VESD:+/-25V IPP:3A IR:0.1uA SOT-323
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3,830In Stock
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Toshiba ESD Protection Diodes / TVS Diodes AUTO AEC-Q Bidirectional ESD Prot. Diode CT:6.5pF VBR:32V @1mA VESD:+/-20V IPP:2.5A IR:0.1uA SOT-323
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8,830In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)
Datasheet
6,250In Stock
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Reel: 4,000

Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)
Datasheet
5,658In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)
Datasheet
2,420In Stock
6,000Expected 18-05-2026
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)
Datasheet
5,962In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)
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1,254In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:200-400 SOT-363 (US6)
Datasheet
4,629In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-363 (US6)
Datasheet
6,000In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
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7,757In Stock
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Toshiba Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
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8,000In Stock
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Toshiba Digital Transistors AUTO AEC-Q Single NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-416)
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4,740In Stock
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Toshiba Digital Transistors AUTO AEC-Q NPN Q1BSR=4.7kO, Q1BER=4.7kO, VCEO=50V, IC=0.1A (SOT-723)
Datasheet
2,145In Stock
8,000Expected 24-04-2026
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