NTHL022N120M3S Silicon Carbide (SiC) MOSFETs

onsemi NTHL022N120M3S Silicon Carbide (SiC) MOSFETs are a family of 1200V M3S planar SiC MOSFETs optimized for fast switching applications. The onsemi NTHL022N120M3S features planar technology that works reliably with negative gate voltage drives and turns off spikes on the gate. The MOSFETs have optimum performance when driven with an 18V gate drive but also work well with a 15V gate drive.

Results: 3
Select Image Part #
 Mfr.
Description Datasheet Availability Pricing (INR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, TO-247-3L
Datasheet
323In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 1.2 kV 30 Ohms EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-3L 40MOHM 1200V M3
Datasheet
682In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 51 A 52 mOhms - 10 V, + 22 V 4.4 V 70 nC - 55 C + 175 C 329 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 65 mohm, 1200 V, M3S, TO-247-3L
Datasheet
590In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 37 A 91 mOhms - 10 V, + 22 V 4.4 V 49 nC - 55 C + 175 C 252 W Enhancement EliteSiC