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SUM40014M-GE3

Name: Vishay SUM40014M-GE3
Brand: Vishay / Siliconix
SKU: 78-SUM40014M-GE3
Price: 508.76 INR
Availability: InStock

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Mouser No:

78-SUM40014M-GE3

Mfr. No:

SUM40014M-GE3

Mfr.:

Vishay / Siliconix

Description:

MOSFETs TO263 N-CH 40V 200A

Datasheet:

SUM40014M-GE3 Datasheet

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	200 A
Rds On - Drain-Source Resistance:	990 uOhms
Vgs - Gate-Source Voltage:	20 V
Vgs th - Gate-Source Threshold Voltage:	2.4 V
Qg - Gate Charge:	182 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Tradename:	ThunderFET
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Vishay / Siliconix
Fall Time:	35 ns
Forward Transconductance - Min:	140 S
Product Type:	MOSFETs
Rise Time:	10 ns
Factory Pack Quantity:	800
Subcategory:	Transistors
Transistor Type:	ThunderFET Power MOSFET
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	1.600 g

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Datasheet

SUM40014M-GE3 Datasheet

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Technical Resources

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Compliance Codes

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

SUM40014M N-Channel 40V MOSFET

Vishay / Siliconix SUM40014M N-Channel 40V MOSFET provides 40V_DS drain-source voltage in a single-configuration D²PAK package with ThunderFET® power. The MOSFET utilizes a lead-free and RoHS-compliant design and is 100% R_g and UIS tested. Vishay / Siliconix SUM40014M N-Channel 40V MOSFET is suitable for use in DC/DC converters, battery management applications, power tools, and motor drive switches.

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.