DI006H03SQ

Diotec Semiconductor
637-DI006H03SQ
DI006H03SQ

Mfr.:

Description:
MOSFETs MOSFET, SO-8, 30V, 6A, 150C, N+P

ECAD Model:
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In Stock: 3,929

Stock:
3,929 Can Dispatch Immediately
Factory Lead Time:
10 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹235.75 ₹235.75
₹151.88 ₹1,518.80
₹103.43 ₹10,343.00
₹82.65 ₹41,325.00
₹76.03 ₹76,030.00
₹75.01 ₹1,50,020.00
Full Reel (Order in multiples of 4000)
₹61.69 ₹2,46,760.00
₹61.59 ₹4,92,720.00

Product Attribute Attribute Value Select Attribute
Diotec Semiconductor
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
SO-8
N-Channel, P-Channel
4 Channel
30 V
4.2 A, 6 A
25 mOhms, 50 mOhms
- 20 V, 20 V
1 V, 2 V
11.7 nC, 11.4 nC
- 55 C
+ 150 C
1.5 W
Enhancement
Reel
Cut Tape
Brand: Diotec Semiconductor
Configuration: Quad
Fall Time: 8.7 ns, 13.5 ns
Forward Transconductance - Min: 4 S, 3.5 S
Moisture Sensitive: Yes
Product Type: MOSFETs
Rise Time: 15 ns, 4.9 ns
Series: DI0XX
Factory Pack Quantity: 4000
Subcategory: Transistors
Typical Turn-Off Delay Time: 17.5 ns, 28.2 ns
Typical Turn-On Delay Time: 11.2 ns, 7.5 ns
Products found:
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Attributes selected: 0

Compliance Codes
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge delivers a low on-state resistance, a low gate charge, and fast switching times. With a wide junction temperature range from -55°C to +150°C, DI006H03SQ provides 1.5W maximum power dissipation and a ±20V maximum continuous gate-source voltage. The low-profile SO-8 packaged DI006H03SQ is geared toward DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.