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DI006H03SQ

Name: Diotec Semiconductor DI006H03SQ
Brand: Diotec Semiconductor
SKU: 637-DI006H03SQ
Price: 212.02 INR
Availability: InStock

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Mouser No:

637-DI006H03SQ

Mfr. No:

DI006H03SQ

Mfr.:

Diotec Semiconductor

Description:

MOSFETs MOSFET, SO-8, 30V, 6A, 150C, N+P

Datasheet:

DI006H03SQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Diotec Semiconductor DI006H03SQ

In Stock: 3,949

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Pricing (INR)

Qty.	Unit Price	Ext. Price
	₹212.02	₹212.02
	₹142.85	₹1,428.50
	₹97.03	₹9,703.00
	₹81.22	₹40,610.00
Full Reel (Order in multiples of 4000)
	₹66.84	₹2,67,360.00
	₹64.77	₹5,18,160.00
24,000	Quote

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diotec Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SO-8
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	4 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	6 A, 4.2 A
Rds On - Drain-Source Resistance:	25 mOhms, 50 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1 V, 2 V
Qg - Gate Charge:	11.7 nC, 11.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.5 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diotec Semiconductor
Configuration:	Quad
Fall Time:	8.7 ns, 13.5 ns
Forward Transconductance - Min:	4 S, 3.5 S
Product Type:	MOSFETs
Rise Time:	15 ns, 4.9 ns
Series:	DI0XX
Factory Pack Quantity:	4000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	17.5 ns, 28.2 ns
Typical Turn-On Delay Time:	11.2 ns, 7.5 ns

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Datasheet

DI006H03SQ Datasheet (PDF)

Models

Full Material Declaration (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Advanced Trench Technology Power MOSFETs

Diotec Semiconductors Advanced Trench Technology Power MOSFETs feature low on-state resistance and fast switching time. These MOSFETs components are available in standard commercial/industrial grading. The power MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. These MOSFETs offer a 100mA to 280A current range and a 20V to 250V voltage range.

DI006H03SQ N/P-Channel Power MOSFET H-Bridge

Diotec Semiconductor DI006H03SQ N/P-Channel Power MOSFET H-Bridge delivers a low on-state resistance, a low gate charge, and fast switching times. With a wide junction temperature range from -55°C to +150°C, DI006H03SQ provides 1.5W maximum power dissipation and a ±20V maximum continuous gate-source voltage. The low-profile SO-8 packaged DI006H03SQ is geared toward DC/DC converters, power supplies, DC drives, synchronous rectifiers, and commercial/industrial-grade applications.