CDMS24783-120 SL

Central Semiconductor
610-CDM24783120SL
CDMS24783-120 SL

Mfr.:

Description:
SiC MOSFETs 18A,1200V Through-Hole MOSFET N-Channel SiC

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Central Semiconductor CDMS24783-120 SL

In Stock: 40

Stock:
40 Can Dispatch Immediately
Factory Lead Time:
1 Week Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
₹-.--
Ext. Price:
₹-.--
Est. Tariff:

Pricing (INR)

Qty. Unit Price
Ext. Price
₹2,572.12 ₹2,572.12
₹1,668.33 ₹16,683.30
₹1,600.05 ₹1,92,006.00

Product Attribute Attribute Value Select Attribute
Central Semiconductor
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-3
N-Channel
1 Channel
1.2 kV
18 A
150 mOhms
20 V
4 V
55 C
- 55 C
+ 175 C
28 W
Depletion
Brand: Central Semiconductor
Configuration: Single
Product: MOSFETs
Product Type: SiC MOSFETS
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
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Attributes selected: 0

Datasheet

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CDMS24783-120 N-Channel SiC MOSFET

Central Semiconductor CDMS24783-120 Silicon Carbide (SiC) N-Channel MOSFET offers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications. This SiC MOSFET features a 20V gate-source voltage, 18A continuous drain current, 28W power dissipation, and 20A pulsed drain current. The CDMS24783-120 MOSFET supports higher breakdown voltage and better thermal conductivity. This device is available in a TO-247 package with an operating temperature range of -55°C to 175°C. Typical applications include Electric Vehicles (EV), renewable energy systems, and medical imaging equipment.

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